IXFK150N15 Datasheet - IXYS Corporation

IXFK150N15 - Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFK 150N15 IXFX 150N15 VDSS = 150 V ID25 = 150 A = RDS(on) 12.5 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) I DM IAR E AR EAS dv/dt P D TJ TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) T C = 25°C, Note 1 TC = 25°C T C = 25°C TC = 25°C I S £ I, DM di/dt £ 100 A/ms, V DD £

IXFK150N15 Features

* Internationalstandardpackages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic rectifier Symbol V DSS V GS(th

IXFK150N15_IXYSCorporation.pdf