IXFK15N100Q - HiPerFET Power MOSFETs
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) = 0.7 Ω trr ≤ 250 ns Preliminary data sheet TO-247 AD (IXFH) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width.
IXFK15N100Q Features
* z IXYS advanced low Qg process z International standard packages z Epoxy meet UL 94 V-0, flammability
classification z Low RDS (on) low Qg z Avalanche energy and current rated z Fast intrinsic rectifier
Advantages
z Easy to mount z Space savings z High power density
© 2001 IXYS All rights reserved