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IXFK140N25T Datasheet - IXYS

IXFK140N25T GigaMOS Power MOSFET

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK140N25T IXFX140N25T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 250V 140A 17mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤.

IXFK140N25T Features

* z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS =

IXFK140N25T Datasheet (162.34 KB)

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Datasheet Details

Part number:

IXFK140N25T

Manufacturer:

IXYS

File Size:

162.34 KB

Description:

Gigamos power mosfet.

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IXFK140N25T GigaMOS Power MOSFET IXYS

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