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IXFK120N25 Datasheet - IXYS

IXFK120N25 - HiPerFET Power MOSFETs

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 120N25 IXFK 120N25 VDSS ID25 RDS(on) = 250 V = 120 A = 22 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C Maximum Ratings 250 250 ±

IXFK120N25 Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

IXFK120N25_IXYS.pdf

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Datasheet Details

Part number:

IXFK120N25

Manufacturer:

IXYS

File Size:

119.32 KB

Description:

Hiperfet power mosfets.

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IXFK120N25 HiPerFET Power MOSFETs IXYS