GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N15T2 IXFX360N15T2 VDSS = ID25 = RDS(on) trr 150V 360A 4.0m 150ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC
Datasheet Details
Part number:
IXFK360N15T2
Manufacturer:
IXYS
File Size:
181.43 KB
Description:
Power mosfet.