Datasheet4U Logo Datasheet4U.com

IXFK36N60P Datasheet - IXYS

IXFK36N60P Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS(on) t rr = 600 V = 36 A ≤ 190 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25.

IXFK36N60P Features

* D = Drain Tab = Drain Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 100 1000 190 V V nA µA µA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID

IXFK36N60P Datasheet (139.05 KB)

Preview of IXFK36N60P PDF
IXFK36N60P Datasheet Preview Page 2 IXFK36N60P Datasheet Preview Page 3

Datasheet Details

Part number:

IXFK36N60P

Manufacturer:

IXYS

File Size:

139.05 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFK36N60 HiPerFET Power MOSFET (IXYS)

IXFK360N10T N-Channel MOSFET (INCHANGE)

IXFK360N10T Power MOSFET (IXYS)

IXFK360N15T2 Power MOSFET (IXYS)

IXFK30N100Q2 Power MOSFET (IXYS Corporation)

IXFK30N50Q Power MOSFET (IXYS Corporation)

IXFK320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)

IXFK320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)

IXFK32N100P Power MOSFET (IXYS)

IXFK32N100Q3 Power MOSFET (IXYS)

TAGS

IXFK36N60P Power MOSFET IXYS

IXFK36N60P Distributor