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IXFK36N60P

Power MOSFET

IXFK36N60P Features

* D = Drain Tab = Drain Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 100 1000 190 V V nA µA µA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID

IXFK36N60P Datasheet (139.05 KB)

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Datasheet Details

Part number:

IXFK36N60P

Manufacturer:

IXYS

File Size:

139.05 KB

Description:

Power mosfet.
Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preli.

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IXFK36N60P Power MOSFET IXYS

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