IXTA14N60P
INCHANGE
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N-channel mosfet.
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IXTA14N60P - PolarHV Power MOSFET
(IXYS)
PolarTM Power MOSFET
Enhancement Mode Avalanche Rated
IXTA14N60P IXTP14N60P IXTQ14N60P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL .
IXTA140N055T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA140N055T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.4mΩ@VGS=10V ·Fully characterized avalanche v.
IXTA140N055T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA140N055T2 IXTP140N055T2
Symbol
VDSS VDGR
VGSM
ID25 IL(RMS) IDM
IA EAS
PD
TJ T.
IXTA140N12T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA140N12T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche vol.
IXTA140N12T2 - Power MOSFET
(IXYS)
TrenchT2TM Power MOSFET
Advance Technical Information
IXTA140N12T2 IXTP140N12T2
VDSS = 120V
ID25 = 140A RDS(on) 10m
N-Channel Enhancement Mode .
IXTA140P05T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA140P05T IXTP140P05T IXTH140P05T
VDSS ID25
RDS(on)
= = ≤
- 50V - 140A 9mΩ
.
IXTA100N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA100N04T2 IXTP100N04T2
VDSS = 40V ID25 = 10.
IXTA100N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA100N04T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTA100N15X4 - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTA100N15X4 IXTP100N15X4
VDSS = ID25 = RDS(on)
150V 100A 11.5m
N-Channel Enhancement Mode.
IXTA102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.
