IXTA52P10P - P-Channel MOSFET
IXTA52P10P Features
* Static drain-source on-resistance: RDS(on)≤50mΩ
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* Hight side switching
* Current regulators
* Automatic test equipment
* ABSOLUTE MAXIMUM RATINGS(Ta=
