Download Datasheet (247.20 KB)
IXTC62N15P
INCHANGE
247.20 KB
N-channel mosfet.
isc N-Channel MOSFET Transistor
*FEATURES *Static drain-source on-resistance:
RDS(on) ≤ 40mΩ *100% .
avalanche tested *Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
📁 Related Datasheet
IXTC62N15P - Power MOSFET
(IXYS)
Preliminary Technical Information
PolarHTTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated
IXTC 62N15P IXTR 62N.
IXTC110N055T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTC110N055T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchMVTM
IXTC110N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche .
IXTC13N50 - Power MOSFET
(IXYS Corporation)
Power MOSFET ISOPLUS220TM
IXTC 13N50
Electrically Isolated Back Surface
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS = 500 V.
IXTC13N50 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTC13N50
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 400mΩ@VG.
IXTC160N10T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.0mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari.
