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IXTC200N10T Datasheet - IXYS Corporation

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IXTC200N10T Power MOSFET

TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS.

IXTC200N10T-IXYSCorporation.pdf

Preview of IXTC200N10T PDF

Datasheet Details

Part number:

IXTC200N10T

Manufacturer:

IXYS Corporation

File Size:

179.86 KB

Description:

Power MOSFET

Applications

* Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS99653A(10/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs V

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