* Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Swi
IXTC200N10T Datasheet (179.86 KB)
IXTC200N10T
IXYS Corporation
179.86 KB
Power mosfet.
TrenchMVTM Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
IXTC200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS.
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