TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient Maximum Ratings 100 100 ± 30 V V V TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 101 75 500 40 1.5 160 -55 +175 175 -55 +175 A A A A J W °C °C °C 1.6mm (0.062in.) f
IXTC200N10T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTC200N10T
Manufacturer:
IXYS Corporation
File Size:
179.86 KB
Description:
Power mosfet.