IXTC200N10T Datasheet - IXYS Corporation

IXTC200N10T Power MOSFET

TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient Maximum Ratings 100 100 ± 30 V V V TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 101 75 500 40 1.5 160 -55 +175 175 -55 +175 A A A A J W °C °C °C 1.6mm (0.062in.) f.

IXTC200N10T Features

* Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Swi

IXTC200N10T-IXYSCorporation.pdf