Datasheet Specifications
- Part number
- IXTC200N10T
- Manufacturer
- IXYS Corporation
- File Size
- 179.86 KB
- Datasheet
- IXTC200N10T-IXYSCorporation.pdf
- Description
- Power MOSFET
Description
TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS.
Applications
* Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS99653A(10/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VIXTC200N10T Distributors
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