IXTM75N10 Datasheet, Mosfet, INCHANGE

✔ IXTM75N10 Features

✔ IXTM75N10 Application

PDF File Details

Manufacture Logo for INCHANGE
INCHANGE manufacturer logo

Part number:

IXTM75N10

Manufacturer:

INCHANGE

File Size:

263.01kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IXTM75N10 📥 Download PDF (263.01kb)
Page 2 of IXTM75N10

TAGS

IXTM75N10
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

IXTM75N10 - N-Channel MOSFET (IXYS Corporation)
MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247.

IXTM10N100 - MOSFET (IXYS Corporation)
.. MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem.

IXTM11N80 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance :.

IXTM11N80 - Power MOSFET (IXYS)
MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con.

IXTM12N100 - MOSFET (IXYS Corporation)
.. MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem.

IXTM12N90 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance :.

IXTM13N80 - Power MOSFET (IXYS)
MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con.

IXTM15N60 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :.

IXTM20N60 - N-Channel MOSFET (IXYS)
MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions.

IXTM20N60 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts