www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 10N100 12N100 10N100 12N100 Maximum Ratings 1000 1000 ±20 ±30 10 12 40 48 300 -55 +150 150 -55 +150 V V V V A A A A W °C °C °C TO
IXTH10N100_IXYSCorporation.pdf
Datasheet Details
Part number:
IXTM12N100, IXTH10N100
Manufacturer:
IXYS Corporation
File Size:
135.23 KB
Description:
Mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTM12N100, IXTH10N100.
Please refer to the document for exact specifications by model.