* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions
IXTM12N100 Datasheet (135.23 KB)
IXTM12N100
IXYS Corporation
135.23 KB
Mosfet.
www.DataSheet4U.com
MegaMOSTMFET
IXTH / IXTM 10N100 IXTH / IXTM 12N100
VDSS 1000 V 1000 V
ID25 10 A 12 A
RDS(on) 1.20 Ω 1.05 Ω
N-Channel Enhancem.
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