IXTM50N20 - MegaMOS FET
www.DataSheet4U.com MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM T C = 25°C Maximum Ratings 200 200 ±20 ±30 50 200 300 -55 +150 150 -55 +150 V V V V A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source,
IXTM50N20 Features
* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2
