IXTM5N100 Datasheet - IXYS Corporation

IXTM5N100, Standard Power MOSFET

Standard Power MOSFET VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V ID25 5A 5A RDS(on) 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol VD

Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
1

Applications

* l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l 5N10

IXTM5N100_IXYSCorporation.pdf