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IXTM5N100 Datasheet - IXYS Corporation

Standard Power MOSFET

IXTM5N100 Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1

IXTM5N100 Datasheet (104.20 KB)

Preview of IXTM5N100 PDF

Datasheet Details

Part number:

IXTM5N100

Manufacturer:

IXYS Corporation

File Size:

104.20 KB

Description:

Standard power mosfet.
Standard Power MOSFET VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V ID25 5A 5A RDS(on) 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol VD.

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IXTM5N100 Standard Power MOSFET IXYS Corporation

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