IXTM13N80 Description
MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con.
IXTM13N80 Features
* q International standard packages
q Low R
HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Low package inductance (< 5 nH)
- easy to drive and to protect
q Fast switching times
Symbol
V DSS
VGS(th) IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(T J
=
25°C,
IXTM13N80 Applications
* q Switch-mode and resonant-mode power supplies
q Motor controls q Uninterruptible Power Supplies (UPS) q DC choppers
Advantages
q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
q Space savings q High power density
IXYS reserves the right to change limits, test conditions, and di
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