IXTM13N80 - Power MOSFET
MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM I D25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM 11N80 13N80 11N80 13N80 800 V 800 V ±20 V ±30 V 11 A 13 A 44 A 52 A PD TJ TJM Tstg Md Weight TC = 25°C Mounting torque 300 W -55 +150 150 -55 +150 °C °C °C 1.13/.
IXTM13N80 Features
* q International standard packages
q Low R
HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Low package inductance (< 5 nH)
- easy to drive and to protect
q Fast switching times
Symbol
V DSS
VGS(th) IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(T J
=
25°C,