IXTM6N80, IXTH6N80 Datasheet - IXYS

IXTM6N80 Power MOSFET

Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg M d Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 800 V 800 V ±20 V.

IXTM6N80 Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Applications l Switch-mode and resonant-mode power supplies l Motor controls l Uninterruptible Power Suppl

IXTH6N80-IXYS.pdf