IXTM6N90 Datasheet - IXYS Corporation

IXTM6N90, Standard Power MOSFET

Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS V.

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IXTM6N90_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTM6N90

Manufacturer:

IXYS Corporation

File Size:

104.91 KB

Description:

Standard Power MOSFET

Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 9

Applications

* l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l 6N90

IXTM6N90 Distributors

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IXTM6N90 Standard Power MOSFET IXYS Corporation

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