Datasheet Details
- Part number
- IXTM6N90A
- Manufacturer
- IXYS Corporation
- File Size
- 104.91 KB
- Datasheet
- IXTM6N90A_IXYSCorporation.pdf
- Description
- Standard Power MOSFET
IXTM6N90A Description
Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS V.
IXTM6N90A Features
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 9
IXTM6N90A Applications
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VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25
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Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Advantages
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6N90
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