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IXTM6N90A Datasheet - IXYS Corporation

Standard Power MOSFET

IXTM6N90A Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 9

IXTM6N90A Datasheet (104.91 KB)

Preview of IXTM6N90A PDF

Datasheet Details

Part number:

IXTM6N90A

Manufacturer:

IXYS Corporation

File Size:

104.91 KB

Description:

Standard power mosfet.
Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS V.

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IXTM6N90A Standard Power MOSFET IXYS Corporation

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