Datasheet Details
- Part number
- IXTM67N10
- Manufacturer
- IXYS Corporation
- File Size
- 1.11 MB
- Datasheet
- IXTM67N10_IXYSCorporation.pdf
- Description
- N-Channel MOSFET
IXTM67N10 Description
MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247.
IXTM67N10 Features
* S
D = Drain, TAB = Drain
D (TAB)
z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect z Fast intrinsic Rectifier
B Symbol
Test Conditions
O V
IXTM67N10 Applications
* z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode
power supplies
VGS(th)
VDS = VGS, ID = 4 mA
2.0
4V
z DC choppers
z AC motor control
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
z Temperature and lighting controls z Low voltage relays
IDSS
VDS =
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