IXTM20N60 Description
MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions.
IXTM20N60 Features
* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Symbol
VDSS V
GS(th)
I GSS
IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless othe
IXTM20N60 Applications
* l Switch-mode and resonant-mode power supplies
l Motor control l Uninterruptible Power Supplies (UPS) l DC choppers
Advantages
l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
l Space savings l High power density
IXYS reserves the right to change limits, test conditions, and dim
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