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IXTM40N30 Datasheet - IXYS Corporation

Power MOSFET

IXTM40N30 Features

* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions

IXTM40N30 Datasheet (138.49 KB)

Preview of IXTM40N30 PDF

Datasheet Details

Part number:

IXTM40N30

Manufacturer:

IXYS Corporation

File Size:

138.49 KB

Description:

Power mosfet.
www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0..

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IXTM40N30 Power MOSFET IXYS Corporation

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