IXTM5N100A Datasheet - IXYS Corporation

IXTM5N100A Standard Power MOSFET

Standard Power MOSFET VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V ID25 5A 5A RDS(on) 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 5 20 180 -55 +150 150 -55 +150 V V V V A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) D G = Gate, S =.

IXTM5N100A Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1

IXTM5N100A_IXYSCorporation.pdf