IXTP4N60P - N-Channel MOSFET
IXTP4N60P Features
* Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* DC/DC Converter
* Ideal for high-frequenc
