IXTP4N70X2M Datasheet - IXYS

IXTP4N70X2M Power MOSFET

Preliminary Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP4N70X2M VDSS = ID25 =  RDS(on) 700V 4A 850m N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lea.

IXTP4N70X2M Features

* International Standard Package

* Plastic Overmolded Tab

* High Voltage Package

* Low RDS(ON) and QG

* Avalanche Rated

* 2500V~ Electrical Isolation

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Sw

IXTP4N70X2M-IXYS.pdf

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Datasheet Details

Part number:

IXTP4N70X2M

Manufacturer:

IXYS

File Size:

193.01 KB

Description:

Power mosfet.

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