IXTP42N25P
IXYS Corporation
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Power mosfet.
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IXTP42N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP42N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTP42N15T - Power MOSFET
(IXYS)
TrenchHVTM Power MOSFET
IXTA42N15T IXTP42N15T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
150V 42A 45mΩ
TO-263
Symbol
VDS.
IXTP44N10T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP44N10T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 30mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTP44N10T - Power MOSFET
(IXYS Corporation)
TrenchTM Power MOSFET
IXTY44N10T IXTP44N10T
VDSS = 100V
ID25 = 44A RDS(on) 30m
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS.
IXTP44P15T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
TO-263 AA (IXTA) TO-220AB (IXTP)
IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T
VDSS.
IXTP450P2 - Power MOSFETs
(IXYS)
Polar2TM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTP450P2 IXTQ450P2 IXTH450P2
VDSS ID25
RDS(on) trr(typ)
= =.
IXTP450P2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to .
IXTP460P2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 270mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTP460P2 - Power MOSFET
(IXYS)
PolarP2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXTA)
IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2
TO-22.
IXTP48N20T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTA48N20T IXTP48N20T IXTQ48N20T
Symbol VDSS VDGR VGSM ID2.
