IXTP4N60P, IXTA4N60P Datasheet - IXYS

IXTP4N60P - PolarHV Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C 4 A TC = 25C, Pulse Width Limited by TJM 10 A TC = 25C OBSOLE4 TE A TC = 25C IS  IDM, VDD  VDSS, TJ  150°C IXTY4N1150060P mJ V/ns TC = 25C IXT.

IXTP4N60P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplies

IXTA4N60P_IXYS.pdf