IXTP4N80P Datasheet - IXYS

IXTP4N80P, Power MOSFET

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(on) ≤.

IXTP4N80P_IXYS.pdf

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Datasheet Details

Part number:

IXTP4N80P

Manufacturer:

IXYS

File Size:

191.31 KB

Description:

Power MOSFET

Features

* z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 100μA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 5 150 3.4 V V nA μA μA Ω z International st

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IXTP4N80P Power MOSFET IXYS

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