* z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 100μA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 5 150 3.4 V V nA μA μA Ω z International st
IXTP4N80P Datasheet (191.31 KB)
IXTP4N80P
IXYS
191.31 KB
Power mosfet.
Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA4N80P IXTP4N80P
VDSS = 800 = 3.6 ID25 RDS(on) ≤.
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