IXTP48P05T
IXYS
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Power mosfet.
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IXTP48P05T - TO-252 P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤30mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for .
IXTP48P05T - TO-220C P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤30mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.
IXTP48N20T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTA48N20T IXTP48N20T IXTQ48N20T
Symbol VDSS VDGR VGSM ID2.
IXTP48N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP48N20T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 50mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTP42N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP42N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTP42N15T - Power MOSFET
(IXYS)
TrenchHVTM Power MOSFET
IXTA42N15T IXTP42N15T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
150V 42A 45mΩ
TO-263
Symbol
VDS.
IXTP42N25P - Power MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
IXTA 42N25P IXTP 42N25P IXTQ 42N25P
VDSS =
ID25 = ≤ RDS(on)
250 42 84
V A mΩ
N-Channel Enhancement Mode Avalanche Rated
T.
IXTP44N10T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP44N10T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 30mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTP44N10T - Power MOSFET
(IXYS Corporation)
TrenchTM Power MOSFET
IXTY44N10T IXTP44N10T
VDSS = 100V
ID25 = 44A RDS(on) 30m
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS.
IXTP44P15T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
TO-263 AA (IXTA) TO-220AB (IXTP)
IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T
VDSS.
