IXTP48P05T, IXTY48P05T Datasheet - IXYS

IXTP48P05T Power MOSFET

TrenchPTM Power MOSFETs Preliminary Technical Information IXTY48P05T IXTA48P05T IXTP48P05T VDSS = ID25 = ≤RDS(on) - 50V - 48A 30mΩ P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s Mounti.

IXTP48P05T Features

* z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z B

IXTY48P05T-IXYS.pdf