MJE801T NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 60 V. DC Current Gain. : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4.

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Datasheet Specifications

Part number: MJE801T
Manufacturer: INCHANGE
File Size: 208.43 KB
Datasheet: MJE801T-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A I

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MJE801T NPN Transistor INCHANGE

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