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MJE802 NPN Transistor

MJE802 Description

isc Silicon NPN Darlington Power Transistor MJE802 .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 80 V. DC Current Gain. : hFE = 750(Min) @ IC= 1.

MJE802 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A I

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Datasheet Details

Part number
MJE802
Manufacturer
INCHANGE
File Size
210.20 KB
Datasheet
MJE802-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJE802-like datasheet