MJE803T NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 80 V. DC Current Gain. : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4.

📥 Download Datasheet

MJE803T Datasheet Preview — Preview of MJE803T PDF

Datasheet Specifications

Part number: MJE803T
Manufacturer: INCHANGE
File Size: 208.19 KB
Datasheet: MJE803T-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A I

MJE803T Distributors

📁 Related Datasheet

MJE803 MJE803G MJE800 MJE800G MJE801 MJE801T

📌 All Tags

MJE803T NPN Transistor INCHANGE

INCHANGE MJE803T-like datasheet