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MJE803T NPN Transistor

MJE803T Description

isc Silicon NPN Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 80 V. DC Current Gain. : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4.

MJE803T Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A I

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Datasheet Details

Part number
MJE803T
Manufacturer
INCHANGE
File Size
208.19 KB
Datasheet
MJE803T-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJE803T-like datasheet