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R6009ENJ

N-Channel MOSFET

R6009ENJ Features

* Drain Current

* ID= 9A@ TC=25℃

* Drain Source Voltage- : VDSS=600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 535mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use i

R6009ENJ General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse.

R6009ENJ Datasheet (250.73 KB)

Preview of R6009ENJ PDF

Datasheet Details

Part number:

R6009ENJ

Manufacturer:

INCHANGE

File Size:

250.73 KB

Description:

N-channel mosfet.

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TAGS

R6009ENJ N-Channel MOSFET INCHANGE

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