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R6009ENJ N-Channel MOSFET

R6009ENJ Description

isc N-Channel MOSFET Transistor R6009ENJ .
Designed for use in switch mode power supplies and general purpose applications.

R6009ENJ Features

* Drain Current
* ID= 9A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 535mΩ(Max)
* 100% avalanche tested

R6009ENJ Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 94 W TJ Max. Operating Junction Temperatur

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Datasheet Details

Part number
R6009ENJ
Manufacturer
INCHANGE
File Size
250.73 KB
Datasheet
R6009ENJ-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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