Datasheet4U Logo Datasheet4U.com

R6009JND3 N-Channel MOSFET

R6009JND3 Description

isc N-Channel MOSFET Transistor R6009JND3 .
Designed for use in switch mode power supplies and general purpose applications.

R6009JND3 Features

* Drain Current
* ID=9A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max)
* 100% avalanche tested

R6009JND3 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperatu

📥 Download Datasheet

Preview of R6009JND3 PDF
datasheet Preview Page 2

Datasheet Details

Part number
R6009JND3
Manufacturer
INCHANGE
File Size
261.74 KB
Datasheet
R6009JND3-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • R6009ENJ - Power MOSFET (ROHM)
  • R6009KNJ - Power MOSFET (ROHM)
  • R6009KNX - Power MOSFET (ROHM)
  • R600 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R6000 - High Voltage Rectifiers (LGE)
  • R6000F - 0.2mA Fast Recovery High Voltage Rectifier (Micro Commercial Components)
  • R6000GP - High Voltage Silicon Rectifier (MCC)
  • R6002ENH - Power MOSFET (ROHM)

📌 All Tags

INCHANGE R6009JND3-like datasheet