R8002ANJ N-Channel MOSFET

INCHANGE

R8002ANJ Description

isc N-Channel MOSFET Transistor R8002ANJ .
Designed for use in switch mode power supplies and general purpose applications.

R8002ANJ Features

* Drain Current
* ID= 24A@ TC=25℃
* Drain Source Voltage- : VDSS=800V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 4.3Ω(Max)
* 100% avalanche tested

R8002ANJ Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 62 W TJ Max. Operating Junction Temperature

📥 Download Datasheet

R8002ANJ Datasheet Preview — Preview of R8002ANJ PDF

Datasheet Details

Part number: R8002ANJ
Manufacturer: INCHANGE
File Size: 250.13 KB
Datasheet: R8002ANJ-INCHANGE.pdf
Description: N-Channel MOSFET

📁 Related Datasheet

R8002ANJFRG - Power MOSFET (ROHM)
R8002ANX - Power MOSFET (Rohm)
R8002CND - Power MOSFET (ROHM)
R8001CND - Power MOSFET (ROHM)
R8003KND3 - Power MOSFET (ROHM)
R8005ANJ - Power MOSFET (ROHM)
R8005ANJFRG - Power MOSFET (ROHM)
R8008ANJ - Power MOSFET (ROHM)

📌 All Tags

N-Channel MOSFET INCHANGE

INCHANGE R8002ANJ-like datasheet

R8005ANX - N-Channel MOSFET
R8008ANX - N-Channel MOSFET
R8010ANX - N-Channel MOSFET