R8002ANJ - N-Channel MOSFET

INCHANGE

📥 Download Datasheet

R8002ANJ Datasheet Preview — Preview of R8002ANJ PDF

Datasheet Details

Part number	R8002ANJ
Manufacturer	INCHANGE
File Size	250.13 KB
Description	N-Channel MOSFET
Datasheet	R8002ANJ-INCHANGE.pdf

R8002ANJ Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 62 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resista

Features

Drain Current.
ID= 24A@ TC=25℃.
Drain Source Voltage- : VDSS=800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 4.3Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 R8002ANJ Similar Datasheet

R8002ANJFRG - Power MOSFET (ROHM)
R8002ANX - Power MOSFET (Rohm)
R8002CND - Power MOSFET (ROHM)
R8001CND - Power MOSFET (ROHM)
R8003KND3 - Power MOSFET (ROHM)
R8005ANJ - Power MOSFET (ROHM)
R8005ANJFRG - Power MOSFET (ROHM)
R8008ANJ - Power MOSFET (ROHM)

Other Datasheets by INCHANGE

R8005ANX - N-Channel MOSFET
R8008ANX - N-Channel MOSFET
R8010ANX - N-Channel MOSFET

Published: Mar 1, 2021 |