R8002ANJ Datasheet - INCHANGE

R8002ANJ, N-Channel MOSFET

isc N-Channel MOSFET Transistor R8002ANJ

Features

* Drain Current
* ID= 24A@ TC=25℃
* Drain Source Voltage- : VDSS=800V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 4.3Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 62 W TJ Max.
Operating Junction Temperature

R8002ANJ-INCHANGE.pdf