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RD3T100CN N-Channel MOSFET

RD3T100CN Description

isc N-Channel MOSFET Transistor RD3T100CN .
Designed for use in switch mode power supplies and general purpose applications.

RD3T100CN Features

* Drain Current
* ID= 10A@ TC=25℃
* Drain Source Voltage- : VDSS= 200V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 182mΩ(Max)
* 100% avalanche tested

RD3T100CN Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 85 W TJ Max. Operating Junction Temperatu

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Datasheet Details

Part number
RD3T100CN
Manufacturer
INCHANGE
File Size
260.79 KB
Datasheet
RD3T100CN-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE RD3T100CN-like datasheet