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STB12NM50-1

N-Channel MOSFET

STB12NM50-1 Features

* Drain Current

* ID= 12A@ TC=25℃

* Drain Source Voltage- : VDSS= 500V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Low Drain-Source

STB12NM50-1 General Description


*Low Drain-Source On-Resistance APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. O.

STB12NM50-1 Datasheet (309.36 KB)

Preview of STB12NM50-1 PDF

Datasheet Details

Part number:

STB12NM50-1

Manufacturer:

INCHANGE

File Size:

309.36 KB

Description:

N-channel mosfet.

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STB12NM50-1 N-Channel MOSFET INCHANGE

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