STP35N65M5 Datasheet - INCHANGE

STP35N65M5, N-Channel MOSFET

isc N-Channel MOSFET Transistor STP35N65M5 *

Features

* With TO-220 packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ 27 TC=100℃ 17 A IDM Drain Current-Single Pulsed 108 A PD Total Di

STP35N65M5-INCHANGE.pdf