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STP45N10F7 N-Channel MOSFET

STP45N10F7 Description

Isc N-Channel MOSFET Transistor STP45N10F7 *.

STP45N10F7 Features

* Static drain-source on-resistance: RDS(on)≤18mΩ
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP45N10F7 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 45 IDM Drain Current-Single Pulsed 180 PD Total Dissipation 60 Tj Operating Junction Temperature

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Datasheet Details

Part number
STP45N10F7
Manufacturer
INCHANGE
File Size
281.18 KB
Datasheet
STP45N10F7-INCHANGE.pdf
Description
N-Channel MOSFET

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