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STW20NM60 N-Channel MOSFET

STW20NM60 Description

isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance APPLICATIONS. Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS D.

STW20NM60 Features

* Drain Current
* ID= 20A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max)
* 100% avalanche tested

STW20NM60 Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 192 W TJ Max. O

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Datasheet Details

Part number
STW20NM60
Manufacturer
INCHANGE
File Size
349.20 KB
Datasheet
STW20NM60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STW20NM60-like datasheet