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STW23NM60ND N-Channel MOSFET

STW23NM60ND Description

isc N-Channel MOSFET Transistor *.

STW23NM60ND Features

* With TO-247 packaging
* High speed switching
* Very high commutation ruggedness
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor STW23NM60ND

STW23NM60ND Applications

* PFC stages
* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 20 12.6 80 PD Total Dissipation

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Datasheet Details

Part number
STW23NM60ND
Manufacturer
INCHANGE
File Size
208.60 KB
Datasheet
STW23NM60ND-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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