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STW20NM50FD N-Channel MOSFET

STW20NM50FD Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW20NM50FD *.

STW20NM50FD Features

* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Tight process control and high manufacturing yields
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STW20NM50FD Applications

* Switching application
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 20 14 80 PD Total Dissipation 214 Tj Max. Operating Junction Te

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Datasheet Details

Part number
STW20NM50FD
Manufacturer
INCHANGE
File Size
207.48 KB
Datasheet
STW20NM50FD-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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