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STW23NM50N N-Channel MOSFET

STW23NM50N Description

isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance APPLICATIONS. Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS.

STW23NM50N Features

* Drain Current
* ID= 17A@ TC=25℃
* Drain Source Voltage- : VDSS= 500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max)
* 100% avalanche tested

STW23NM50N Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Pluse 68 A PD Total Dissipation @TC=25℃ 125 W TJ Max.

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Datasheet Details

Part number
STW23NM50N
Manufacturer
INCHANGE
File Size
349.32 KB
Datasheet
STW23NM50N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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