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SUP70060E N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor SUP70060E *.

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Datasheet Specifications

Part number
SUP70060E
Manufacturer
INCHANGE
File Size
257.69 KB
Datasheet
SUP70060E-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 131 75 240 PD Total Dissipation @TC=25℃ 200 Tch Max. Operating

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