SUP70N03-09BP Datasheet - Vishay Siliconix

SUP70N03-09BP N-Channel MOSFET

SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.009 @ VGS = 10 V 0.013 @ VGS = 4.5 V ID (A) 70a 60 TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP70N03-09BP SUB70N03-09BP N-Channel MOSFET D S Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalan.

SUP70N03-09BP_VishaySiliconix.pdf