* TrenchFET® power MOSFET
* Package with low thermal resistance
* Maximum 175 ºC junction temperature
* Low RDS(on) minimizes power loss from conduction
* Compatible with logic-level gate driving
* 100 % Rg and UIS tested
* Material categorizat
SUP70101EL Datasheet (160.50 KB)
SUP70101EL
160.50 KB
P-channel mosfet.
www.vishay.com SUP70101EL Vishay Siliconix P-Channel 100 V (D-S) 175 °C MOSFET TO-220AB Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () .
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