SUP75N06-08 Datasheet - TEMIC Semiconductors

SUP75N06-08 N-Channel Enhancement-Mode Transistors

SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 60 TO-220AB TO-263 G DRAIN connected to TAB G D S Top View SUB75N06-08 S N-Channel MOSFET rDS(on) (W) 0.008 ID (A) 75a D G D S Top View SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25.

SUP75N06-08_TEMICSemiconductors.pdf