TK380P60Y Datasheet - INCHANGE

TK380P60Y, N-Channel MOSFET

isc N-Channel MOSFET Transistor TK380P60Y *

Features

* Static drain-source on-resistance: RDS(on)≤0.38Ω
* Easy to control Gate switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Operating Junction And Storage Temperature Tstg

TK380P60Y-INCHANGE.pdf