Datasheet4U.com

TK380P65Y - Silicon N-Channel MOSFET

Toshiba

📥 Download Datasheet

TK380P65Y Datasheet Preview — Preview of TK380P65Y PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK380P65Y
Manufacturer	Toshiba
File Size	446.71 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK380P65Y-Toshiba.pdf

TK380P65Y Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 9.7.

📁 TK380P65Y Similar Datasheet

TK30A06J3A - MOSFET (Toshiba Semiconductor)
TK30A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30J25D - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30S06K3L - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK31J60W - N-Channel MOSFET (INCHANGE)
TK31J60W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK31N60W - N-Channel MOSFET (INCHANGE)

Other Datasheets by Toshiba

TK380P60Y - Silicon N-Channel MOSFET
TK380A60Y - Silicon N-Channel MOSFET
TK380A65Y - Silicon N-Channel MOSFET
TK31A60W - Silicon N-Channel MOSFET
TK31E60W - Silicon N-Channel MOSFET
TK31E60X - Silicon N-Channel MOSFET

Published: Jul 8, 2019 |