TK380P65Y Datasheet - Toshiba

TK380P65Y, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK380P65Y TK380P65Y 1.

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.
) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (N

TK380P65Y-Toshiba.pdf