NJ132 - Silicon Junction Field-Effect Transistor
F-32 01/99 NJ132 Process Silicon Junction Field-Effect Transistor High Speed Switch Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C G S-D S-D G Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ132 Process.
Datasheet 2N4391, 2N4392 2N4393 2N4856, 2N4857 2N4858, 2N4859 2N4860, 2N4861 2N4856A
