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NJ1800DL Datasheet - InterFET

NJ1800DL Silicon Junction Field-Effect Transistor

F-46 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor Low-Current Low Gate Leakage Current High Input Impedance Low-Noise 10 mA +150°C 65°C to +175°C D G Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts Device in this Databook based on the NJ1800DL Process. Datasheet IF1801 S Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. www.D.

NJ1800DL_InterFET.pdf

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Datasheet Details

Part number:

NJ1800DL

Manufacturer:

InterFET

File Size:

148.88 KB

Description:

Silicon junction field-effect transistor.

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NJ1800DL NJ1800DL Silicon Junction Field-Effect Transistor InterFET

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