F-46 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor Low-Current Low Gate Leakage Current High Input Impedance Low-Noise 10 mA +150°C 65°C to +175°C D G Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts Device in this Databook based on the NJ1800DL Process.
Datasheet IF1801 S Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq.
Substrate is also Gate.
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